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Low-temperature ion mixing of yttrium and silicon (1990)

Alford, T. L. ; Børgesen, P. ; Mayer, J. W. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 1288-1292

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Ion mixing of yttrium and amorphous silicon bilayers was measured as a function of fluence and temperature using 600-keV Xe++ ions between 80 and 498 K. At 80 K the mixing rate was in excellent agreement with a theoretical model based on thermal spike mixing. For temperatures up to ≈372 K, the temperature-dependent contributions accounted for less than 50% of the overall mixing rate. For mixing at or above 400 K, our results revealed the formation of an ion-beam-induced orthorhombic Y-Si phase, which is not normally formed during thermal anneals of such bilayers.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345678

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