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Cleavage energies in semiconductors (1990)

Berding, M. A. ; Krishnamurthy, Srinivasan ; Sher, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 6175-6178

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We present a method for the calculation of the surface and cleavage energies, Eγ, for semiconductors, based on a tight-binding Green's function approach and a difference-equation solution for the layered structure. Energies are calculated for a representative group of semiconductors, and cleavage energies are found to agree well with the available experimental data. We find ESiγ(111)=1360 ergs/cm2, and Eγ(110)=1000, 180, and 120 ergs/cm2 for GaAs, CdTe, and HgTe, respectively.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345181

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