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Oxidation of silicon: Is there a slow interface reaction? (1989)

Doremus, Robert H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 4441-4443

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Chemical analysis of the surface of an oxidized silicon-germanium mixture by Rutherford backscattering reported recently showed that the silicon is oxidized, but not the germanium. This result provides evidence that the effective oxygen concentration at the silica-silicon interface is low, which is contrary to a slow interface reaction. Strain in the oxide film can result in linear-parabolic oxidation kinetics without a slow interface reaction.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343940

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