Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
65 (1989), S. 4051-4056
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Metal-insulator-semiconductor diodes were fabricated using Pd, Ni, and Au contacts on n-InP covered by a 40-A(ring) chemically grown oxide. The oxide had a refractive index of 1.4–1.6 with a composition of mainly In2O3+some InPO3 near the surface and mixed oxide+InP near the interface. Pd devices gave the highest-barrier height of 0.80 eV and the lowest reverse saturation current density of 3×10−8 A/cm2. Current-voltage-temperature and capacitance-voltage-temperature data gave temperature dependence of barrier height and revealed an interface state recombination current mechanism with surface states 0.4 eV above the valence-band level. Richardson plots gave good straight lines when empirically corrected using barrier height divided by ideality factor.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343331
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