Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 3972-3974
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The formation of bubbles and holes in hydrogenated amorphous silicon (a-Si:H) films after isochronal annealing has been investigated. The internal stress of the bubble in an a-Si:H film has been determined by the relationship between the diameter and height of a bubble. In addition, the internal stress of the bubble has also been investigated based on the difference in hydrogen concentration between the flat and bubble areas determined by Fourier-transform infrared microspectroscopy. Consistent results are obtained from both methods regarding the magnitude of the internal stress. These results indicate that the bubble is formed by molecular hydrogen evolving from the a-Si:H film.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341355
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