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The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality (1988)

Brown, A. S. ; Mishra, U. K. ; Henige, J. A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 3476-3480

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The quality of GaInAs-AlInAs epitaxial layers is found to be critically dependent on the degree of (100)-InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4° off the (100). The heterojunction interface quality as determined by the full width at half-maximum of quantum-well photoluminescence is also improved when a substrate misoriented by 4° is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum-well structures.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341482

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