ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A systematic study of the 1/f noise dependence on the channel length in p- and n-channel silicon MOSFETs (metal-oxide-semiconductor field-effect transistors) is presented. Devices made by the same procedure on the same chip were used. In this way, the nonuniformity of noise sources, which strongly depend on the fabrication procedure (like 1/f noise produced by surface trapping), was avoided. Hooge's parameter αH was used as a measure of the magnitude of the 1/f noise in the device. The αH was found to vary as the square of the channel length in p MOSFETs and in the most of the n MOSFETs. Existing theories and known noise mechanisms do not explain this dependence. The incorporation of a recent theory involving the acceleration 1/f noise in semiconductors, developed by van der Ziel, explains the experimental data very well. The αH was found to be independent upon the electric field and the extraction of an effective time constant was used for comparison between theory and experiment.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341892
