Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 1198-1202
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
p/n InP homojunction solar cells with a modified contacting scheme have been fabricated from wafers grown by liquid phase epitaxy. A p+-In0.53Ga0.47As contacting layer is incorporated in the cell structure to reduce contact resistance and to eliminate surface spiking problems at the front surface. The highest conversion efficiency (total area) obtained under AM0 illumination is 15.0%. The corresponding open-circuit voltage, short-circuit current density, and fill factor for the best cell are 0.866 V, 29.3 mA/cm2, and 81.0%, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339980
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