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Amorphous phase formation in Ni3B by low-temperature deuterium implantation (1988)

Thomé, L. ; Pons, F. ; Ligeon, E. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 63 (1988), S. 722-725

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The amorphous phase formation in Ni3B single crystals implanted at 15 K with deuterium ions is studied via in situ Rutherford backscattering and channeling experiments, and the lattice site of implanted deuterium was determined by using the D(3He,p)4He nuclear reaction. The amorphization kinetics is found to present a sigmoidal shape, indicating that amorphization results from a defect-accumulation mechanism. At D fluences below the amorphization threshold, implanted D atoms are located in interstitial sites of the Ni3B orthorhombic structure, while they are trapped in the strained region between amorphous clusters as soon as amorphization occurs.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.340063

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