Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 797-802
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Conduction enhancement characteristics and the conduction mechanism in nitroxide are reported in this paper. Thermally grown oxides with various thicknesses were nitrided in pure ammonia for different nitridation times. Conduction in thick oxide after short-time nitridation is dominated by Fowler–Nordheim tunneling with lowered barrier height. A trap-assisted tunneling model was used to explain the effect of the degree of nitridation on current enhancement in heavily nitrided films. A theoretical calculation was carried out to fit the theory to the experimental results, and the trap density and trap energy level were found to be in the ranges of 1.2×1019–7.2×1020 cm−3 and 2.46–2.56 eV, respectively. These results are explained satisfactorily by the Auger spectroscopic data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340072
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