ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The defect generation induced in the silicon substrate at nitride film edges during a local oxidation process is studied as a function of the film-edge orientation on (1¯11) and (011) wafers. The dislocations are characterized by high voltage transmission electron microscopy. A theoretical model which allows us to predict the defect types for arbitrarily oriented film edges and substrates is applied. Excellent agreement between experiment and theoretical calculations is obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340307