Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 3253-3256
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Consequences of the splitting of the electronic levels in a dilute magnetic semiconductor have been observed by measuring the capacitance of a simple Schottky barrier at 4.2 K in the presence of magnetic fields up to 60 kOe. The material used was a single crystal of degenerately Ga-doped Cd1−xMnxSe. The variation of the diffusion potential in the semiconductor as a function of magnetic field was deduced from C(V) measurements at 1 MHz. By assuming the presence of an interfacial layer at the metal/semiconductor interface, the derived band conduction splitting is in relatively good agreement with that calculated by using the magneto-optical properties of the material.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339331
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