Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 4426-4432
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The diffusion behavior of arsenic in polycrystalline silicon (poly-Si) and the grain growth of arsenic-doped poly-Si with a TiSi2 overlying layer were investigated by MeV 4He2+ backscattering techniques and transmission electron microscopy. Fine-grain (30–40 nm) poly-Si was implanted with 1 or 3×1016 arsenic ions/cm2 and annealed in two stages: (1) at 885 or 985 °C in an oxygen atmosphere to distribute (homogenize) the arsenic throughout the poly-Si layer and (2) at 750 °C in a vacuum ambient with deposited Ti or TiSi2 overlay to determine the out-diffusion of arsenic. After a 750 °C anneal for 8 h, there was essentially no arsenic redistribution in the sample homogenized at 985 °C, but a loss of 40% arsenic was observed in the sample homogenized at 885 °C. The Si grains in the 280-nm-thick poly-Si layer grew in size during homogenization, up to 400 nm at 985 °C and 150 nm at 885 °C. No grain growth was observed after a 750 °C, 8-h anneal of doped poly-Si films in contact with Ti.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339080
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
