ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have used the technique of electrolyte electroreflectance (EER) coupled with electrochemical etching to profile through epitaxial layers and heterostructures of Hg1−xCdxTe. The need for proper electrochemical control during EER measurements is discussed. The resolution achieved in both composition, Δx=±0.002, and etch depth, ±30 A(ring), has made possible the observation of the variations in composition at the ambient/epilayer, epilayer/substrate, and high-x/low-x interfaces. Good correlations of the profiles observed have been obtained with secondary ion mass spectroscopy, electron dispersive x-ray diffraction, and Rutherford backscattering measurements. The variation of the broadening parameter Γ at these interfaces is also discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339042
