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Kinetics of laser-induced chemical vapor deposition of gold (1987)

Kodas, T. T. ; Baum, T. H. ; Comita, P. B.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 62 (1987), S. 281-286

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Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Rates of photothermal gold deposition onto alumina substrates heated by a focused argon-ion laser beam were measured by determining the time required for deposits to grow through the focal spot of a HeNe laser probe beam directed parallel to the substrate. Deposition rates from 0.25 to 6 μm/s were measured for deposits with heights ranging from 5 to 100 μm. Rates of gold deposition using dimethyl gold hexafluoroacetylacetonate as a precursor depend linearly on the gold precursor partial pressure and for a wide variety of conditions do not depend on the laser power or focal spot diameter. A theory is presented to describe reactant mass transfer-controlled deposition with and without buffer gas. Comparison of measured with calculated growth rates showed that gold deposition rates using dimethyl gold hexafluoroacetylacetonate as a precursor were transport limited for the conditions studied. Theory and experiment also showed that the deposition rate decreases inversely with increasing buffer gas pressure above a critical pressure.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.339141

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