ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Monte Carlo simulations of amorphous hydrogenated silicon thin-film growth are carried out to examine the effects of film growth reactions, etching reactions, and surface diffusion on three-dimensional film structure. Although a simulated film contains 1000 silicon atoms or less, the hydrogen content and density can be extrapolated to bulk values. The predicted bulk values of the hydrogen content, 11–44 at. %, and density, 1.8–2.0 g/cm3, are consistent with experimental results. The surface diffusion of silicon-containing species is found to have the most significant effect on the final film properties. A knowledge of the specific chemical mechanism leading to film growth is not assumed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337882
