Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 2387-2392
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A closed-form analytical expression is derived to predict the threshold voltage of a narrow-gate metal-oxide-semiconductor field-effect transistor with a fully recessed field-isolation structure. The calculation is based on a simple conformal transform and a physical model employing the depletion approximation. The physical origin of the inverse narrow-gate effect is mentioned. Threshold-voltage variations under the influence of various physical parameters are discussed, and a comparison with published data shows that the present model is useful.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337954
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