ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

"New donors'' in silicon: An interface effect due to internal oxidation (1986)

Henry, A. ; Pautrat, J. L. ; Saminadayar, K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 3192-3195

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The analysis of Czochralski-silicon annealed in the range 500–800 °C is performed using infrared transmission, electron paramagnetic resonance and admittance spectroscopy measurements. It is shown that the experimental data and especially, new original data obtained with the pulsed admittance spectroscopy technique are consistent with a new model. The "new donors'' effect would in fact be the result of the inversion layer around silica precipitates. This model is demonstrated taking in account the known properties of the Si/SiO2 interface (between precipitates and the silicon crystal). The electrical conduction is shown to be a percolation process through an inhomogeneously conducting material.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337735

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit