Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 3196-3198
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Results of 1/f noise measurements in n-Si and p-Si between room temperature and liquid-nitrogen temperature are presented. The temperature dependence of the noise in the n-Si samples appears fairly complex, and it does not appear that one can find a simple model to explain it. Two different heat treatments of p-type samples were used. In those treated at 950 °C the noise declines with increasing reciprocal temperature in a manner similar to that found by other investigators. For p-type samples treated at 550 °C the noise at room temperature is two orders of magnitude smaller than for the high-temperature samples and the temperature dependence is much smaller.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337736
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