Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 2419-2421
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electrical conduction data from undoped low-pressure chemically vapor deposited polycrystalline silicon thin films at room temperature and above are presented. The physical mechanisms pertinent to general current-voltage characteristics are experimentally interrogated from three different viewpoints. In the nonlinear current-voltage region, the sheet resistance Rs is shown to vary drastically depending on the device aspect ratio for given applied electrical field E¯. The nonscalability of Rs with respect to E¯, the temperature behavior of Rs, and the photoconductivity data indicate that the nonlinear current-voltage behavior cannot be attributed to field-enhanced conductivity. Other possible mechanisms responsible for observed nonlinearity are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337154
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