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Digitale Medien

A p-n-p AlGaAs heterojunction bipolar transistor for high-temperature operation (1986)

Frost, M. S. ; Riches, M. ; Kerr, T.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 2149-2153

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Successful operation of a p-n-p AlGaAs heterojunction bipolar transistor at temperatures up to 800 K (527 °C) has been achieved. The device was fabricated from molecular-beam epitaxy grown material and features an Al0.45Ga0.55As emitter and Al0.25Ga0.75As base and collector regions. At room temperature a common emitter current gain of 12 is obtained, which reduces to ∼3 at 800 K. Weak emission of light is seen from the base region with λ=7170 A(ring) at 300 K, in agreement with the expected band gap for Al0.25Ga0.75As of 1.74 eV.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.337168

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