Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 1518-1524
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial tetragonal and hexagonal MoSi2 (t-MoSi2 and h-MoSi2) were grown locally in (001), (111), and (011)Si. Five different epitaxial modes, referring to sets of definite orientation relationships between silicides and the substrate Si, were identified for t-MoSi2, whereas three distinct modes were found for h-MoSi2. Variants of epitaxy, required by the symmetry consideration, were also observed. It is conceived that ample thermal energy was supplied during high-temperature annealings to cause various modes of epitaxy which presumably correspond to low-energy states that occur. The reactive nature of the silicide formation is suggested to facilitate the growth of epitaxial silicides on silicon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336458
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