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Some remarks on annealing and doping in CuInS2 (1986)

Lin, J. L. ; Liu, L. M. ; Lue, J. T. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 378-382

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: This paper addresses problems associated with thermal annealing and n-type and p-type doping in CuInS2. The results of incorporating impurities like Zn and P in CuInS2 single crystals by different methods are reported. Some evidence has been provided to explain the formation of precipitates being the limiting factor to exhibit the shallow acceptor property. The electron beam annealing of phosphorus-implanted CuInS2 has been shown for the first time to be an effective way for p-type conductivity control by extrinsic impurities in any I-III-VI2 ternary chalcopyrite.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336694

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