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Schottky barrier height variations on the polar (111) faces of n-GaP (1985)

Schwartz, G. P. ; Gualtieri, G. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 4621-4625

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Current-voltage, capacitance-voltage, and photoresponse measurements have been reexamined on the polar Ga-(111)A and P-(∼(111)) B surfaces of n-GaP for reactive (Al) and nonreactive (Ag) metals. Using a chemical etching/in vacuo desorption cleaning sequence, nearly oxide-free A and B faces could be obtained. For diodes formed on such surfaces, the intrinsic, face-dependent variation in A and B Schottky barrier heights was less than 30 meV.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336231

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