Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 5302-5305
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The concept of electronic doping is used to explain unexpectedly large values of the diode quality factor (exceeding two) and supralinearity which is sometimes observed in amorphous silicon p-i-n-type diodes and materials, respectively. This suggests the presence of an extra set of defect states in lightly boron-doped films with a capture rate for electrons which is much larger than that of the inherent defect states. We also report that for high-quality undoped intrinsic layers, the photoconductivity versus intensity behavior exhibits sublinear power dependence which increases with intensity in distinct contrast to the previously reported results. We provide a self-consistent model which is able to explain the above observations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334845
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