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An improved fabrication technique for porous silicon (1993)

Diaz, D. C. ; Osmanski, M. ; Guan, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 64 (1993), S. 507-509

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: An improved technique for fabrication of porous silicon is described. Silicon wafers of any size and shape can be anodized with this very versatile apparatus. Also, this technique is shown to be safer due to reduced HF acid handling. Overall, this equipment allows more efficient fabrication of uniform and good quality porous silicon safely on silicon wafers of variable sizes and shapes.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1144223

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