ISSN:
1476-4687
Source:
Nature Archives 1869 - 2009
Topics:
Biology
,
Chemistry and Pharmacology
,
Medicine
,
Natural Sciences in General
,
Physics
Notes:
[Auszug] Czochralski-grown dislocation-free silicon crystals1 contain 5-18 x 1017 interstitial oxygen atoms per cm3 (giving an atomic oxygen concentration in the range 10-36 parts per million). During crystal growth, oxygen is dissolved from the silica cruc- ible containing the molten silicon and is ...
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1038/336364a0