ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100)substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, forFilm Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this studywas composed of following two procedures; the 1st deposition was using ALD method and 2nddeposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were depositedusing alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging.Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step depositedZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, thismethod could be applied to the FBAR applications, since FBAR devices require high quality of thinfilms
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.449-452.977.pdf
