ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The growth of 6H-SiC crystal from Si-Ti-C ternary solution was conducted under thetemperature gradient and the crystalline quality evaluations of the grown crystals were carried out. 6H-SiC(0001) on-axis pvt-grown crystal was used as a seed crystal. Micropipes in the seed crystal were terminated during the solution growth and 28mm??28mm self-standing micropipe-free SiC crystals were obtained. The quality of the grown crystals was investigated by SIMS, high-resolutionx-ray diffraction and molten KOH etching. The content of residual impurities in the SiC were very low. The X-ray ??-rocking curves of the solution grown SiC showed single peak with high peak intensity ,while that of the seed crystal showed several peaks due to the misoriented domains. Moreover, it was found that the number of etch-pit in the grown crystal is much less than that in the seed crystal and it decreases with the increase of the growth thickness. These results indicate that thecrystalline quality of grown crystal was significantly improved during the solution growth
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.13.pdf
