ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Experimental results are presented for SiC epitaxial layer growths employing a largearea, 7x3-inch, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 30-micron thick, specular, device-quality SiC epitaxial layers with background doping concentrations of 〈1x1014 cm-3. Multi-layer device profiles such as Schottky, MESFETs, SITs, and BJTs with n-type doping from ~1x1015 cm-3 to 〉1x1019 cm-3, p-typedoping from ~3x1015 cm-3 to 〉1x1020 cm-3, and abrupt doping transitions (~1 decade/nm) are regularly grown in continuous growth runs. Intrawafer layer thickness and n-type doping uniformities of 〈1% and 〈5% s/mean have been achieved. Within a run, wafer-to-wafer thickness and doping variation are ~±1% and ~±5% respectively. Long term run-to-run variations while under process control are approximately ~3% s/mean for thickness and ~5% s/mean for doping.Latest results from an even larger 6x4-inch (100-mm) reactor are also presented
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.137.pdf
