ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report on growth of 3C-SiC by sublimation process in vacuum with the aim toultimately select conditions for single polytype growth of bulk crystals. The 3C polytypeoccurrence, growth mechanism and structure evolution have been in the focus of the study. To gainunderstanding of the initial formation of the cubic polytype, growth was performed on varioussubstrates, such as 6H- and 4H-SiC (on-axis and vicinal), as well as freestanding 3C-SiC wafers.The growth configuration used allowed a high growth rate, e.g. up to 200 (m/h, respectively verythick layers. The grown material was studied by means of optical microscopy, AFM and HRTEM.6H-SiC (0001) Si-face substrates may be a good choice if the 3C nucleation is well controlled,which can be achieved by selecting the initial temperature ramp up and substrate orientation. Thesegrowth conditions limit the number of nucleation centers and decrease the defective boundaries
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.283.pdf
