ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The main obstacle for the implementation of numerical simulation for the prediction ofthe epitaxial growth is the variety of physical processes with considerable differences in time andspatial scales taking place during epitaxy: deposition of atoms, surface and bulk diffusion, nucleationof two-dimensional and three-dimensional clusters, etc. Thus, it is not possible to describe allof them in the framework of a single physical model. In this work there was developed a multi-scalesimulation method for molecular beam epitaxy (MBE) of silicon carbide nanostructures on silicon.Three numerical methods were used in a complex: Molecular Dynamics (MD), kinetic Monte Carlo(KMC), and the Rate Equations (RE). MD was used for the estimation of kinetic parameters ofatoms at the surface, which are input parameters for other simulation methods. The KMC allowedthe atomic-scale simulation of the cluster formation, which is the initial stage of the SiC growth,while the RE method gave the ability to study the growth process on a longer time scale. As a result,a full-scale description of the surface evolution during SiC formation on Si substrates wasdeveloped
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.315.pdf
