ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Semi-insulating SiC grown by the HTCVD technique are studied by luminescence andabsorption measurements and the results are compared to PAS and SIMS results. We have foundthat metal impurities are present but only in very small concentrations. The semi-insulatingproperties are instead determined by the intrinsic defects, mostly the silicon vacancy in hydrocarbonrich grown material and the carbon vacancy in the hydrocarbon poor grown material. Thehydrocarbon poor material is stable upon annealing both from a vacancy concentration point of viewand from a resistivity point of view. The hydrocarbon rich grown material does not stand theannealing at 1600 °C and the resistivity is decreased; from the absorption and PAS measurementswe have observed that the decrease in silicon vacancy concentration fits the growth of the vacancyclusters
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.455.pdf
