ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711.pdf
