ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
While there have been numerous reports of short-term transistor operation at 500 °C orabove, these devices have previously not demonstrated sufficient long-term operational durability at500 °C to be considered viable for most envisioned applications. This paper reports thedevelopment of SiC field effect transistors capable of long-term electrical operation at 500 °C. A6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a500 °C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current(IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the durationof the biased 500 °C test. Another high-temperature packaged 6H-SiC MESFET was employed toform a simple one-stage high-temperature low-frequency voltage amplifier. This single-stagecommon-source amplifier demonstrated stable continuous electrical operation (negligible changes togain and operating biases) for over 600 hours while residing in a 500 °C air ambient oven. In bothcases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominanttransistor degradation mechanism that limited the duration of 500 °C electrical operation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.831.pdf
