ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
There is a growing demand for a silicon-based light emitters generating a light with awavelength in of 1.3-1.6 μm range, which can be integrated into silicon chips and used for in-chipopto-electronic interconnects. Among other possibilities, the D1 luminescence at about 1.55 m,caused by dislocations in Si, can be a suitable candidate for such in-chip light emitters. Here wepresent a brief review of today knowledge about electronic properties of dislocations in silicon anddislocation-related luminescence in connection with possible application of this luminescence forsilicon infrared light-emitting diodes (Si-LEDs)
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.590.29.pdf
