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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 591-593 (Aug. 2008), p. 654-660 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Polycrystalline SiC-diamond composites have been fabricated by high pressure and hightemperature, HPHT, sintering using a Si infiltration method. However, infiltration of liquid siliconaround the diamond particles results not only in SiC but also in free silicon, which causesdeterioration of the composite properties. In this work, a novel sintering procedure was developedto avoid the formation of free silicon in the composite structure. A disc composed of a mixture ofgraphite and silicon was first press-molded at room temperature. The disc was then placed abovethe diamond powder inside a high pressure chamber used for the HPHT sintering process. Thisarrangement permitted to preferentially form liquid Si in a C solution, which infiltrates in betweenthe diamond particles. Using this procedure, free silicon formation is inhibited and the SiC-diamondcomposite forms a rigid structure with improved properties
    Type of Medium: Electronic Resource
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