ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have studied the small clusters of silicon and carbon interstitials by ab initiosupercell calculations in 4H-SiC. We found that silicon interstitials can form stable and electricallyactive complexes with each other or with a carbon interstitial. Local vibration modes andionization energies were also calculated in order to help the identification of the defects. Wepropose that silicon interstitials can emit from these clusters at relatively high temperatures,which may play an important role in the formation of the DI center
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.413.pdf