ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Thermal anisotropy in 4H-, and 6H-SiC bulk single crystal wafers was studied by thePPE method. The thermal diffusivities of the [1-100] and [11-20] orientations (^c-axis) sampleswere higher than those of the [0001] orientation (//c-axis) samples. Moreover, the thermalanisotropies of the lattice component and the carrier component were analyzed by Ramanmeasurement
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.521.pdf