ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Si films were deposited by inductively coupled plasma chemical vapor deposition at roomtemperature with a mixture of SiH4/H2. The microstructure of the film was characterized with Fouriertransform of infrared, Raman spectroscopy, atomic force microscopy. We found that SiH4 concentrationstrongly affects the structure of Si films and nano-crystalline film can be synthesized at room temperatureby optimizing the silane concentration. The analysis for optical properties of the films suggested that theoptical band gap EOPT of films are distinctively lower than those of amorphous Si films. It has beenobserved that the EOPT of sample decreases with the increasing of H content in film
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.2228.pdf