ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Substrate transfer technology for SOI and non-SOI single-crystalline silicon wafers wasdemonstrated allowing for high-performance low-power RF applications. 3D deformable electronicscould be realized by vertically thinning and laterally partitioning of the silicon substrate onsub-millimeter scale. By varying the partition dimensions and the geometry of connecting bridges, thelevel of acceptable deformations can be controlled. The targeted applications of this technology arewireless ID tags and sensor networks. The mechanical properties such as crack, interfacialdelamination are critical to reach the flexible substrate. In this contribution, results of our work onmechanical reliability issues of poly- and single crystalline silicon on ultra-thin polyimide substratesare presented. To improve reliability, square and hexagonal segmentation with different size isapplied to the silicon layer before it is transferred onto an ultra-thin polyimide substrate usingwafer-to-wafer substrate transfer technique based on a temporary glass carrier. Generation of crackswithin the silicon and dielectric layers is then studied under controlled bending and tensile loads. Theformation of cracks is studied experimentally using specially for this purpose designed bending andtensile tools. Ultra-thin interfacial delamination are also focused in this work by experimental and FEsimulation method. A new test setup is designed for mixed mode bending testing which has capacityto observation specimen and recording the crack length and crack opening by microscope. The criticalenergy release depended on mixed angle can be reach by combination experimental data with FEMsimulation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.353-358.2529.pdf
