ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Indium tin oxide (ITO) CMP was performed by change of de-ionized water (DIW)temperature in pad conditioning process. DIW with high temperature was employed in padconditioning immediately before ITO-CMP. The removal rate of ITO thin film polished by silicaslurry immediately after pad conditioning process with the different DIW temperatures dramaticallyincreased to 93.0 nm/min after pad conditioning at DIW of 75 oC, while that after the generalconditioning process at 30 oC was about 66.1 nm/min. The grains of ITO thin film becameindistinguishable by CMP after pad conditioning with the high-temperature DIW. The carrier densitydecreased with the increase of conditioning temperature. The hall mobility rapidly increasedregardless of conditioning temperature. The uniformity of optical transmittance also improved
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.263.pdf