ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The properties of germanium implanted into the SiO2 layers in the vicinity of the bondinginterface of silicon-on-insulator (SOI) structures are studied. It is shown that no germaniumnanocrystals are formed in the buried SiO2 layer of the SOI structure as a result of annealing at thetemperature of 1100° C. The implanted Ge atoms segregate at the Si/SiO2 bonding interface. In thiscase, Ge atoms are found at sites that are coherent with the lattice of the top silicon layer. It is foundthat the slope of the drain–gate characteristics of the back metal-oxide-semiconductor (MOS)transistors, prepared in the Ge+ ion implanted structures, increases. This effect is attributed to thegrown hole mobility due to the contribution of an intermediate germanium layer formed at the Si/SiO2interface
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.143.pdf