Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 149-154
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Results are presented of a comparative study of carrier lifetime in silicon and germanium.The impact of surface quality and passivation, of dopant type and concentration and of metallicimpurities is studied using microwave probed free carrier absorption transient techniques
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.149.pdf
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