Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 136 (Feb. 2008), p. 133-138
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The ternary nitride (Zr,Ti)N thin films were grown on silicon substrates by ion-assisteddual d.c. reactive magnetron sputtering technique. The substrates were exposed to ion bombardmentwith varying kinetic energy in the range of 3-103 eV under N/Ar ratio of 1:3. The (Zr0.6Ti0.4)N wasformed at all growth conditions. X-ray diffraction measurement indicates the presence of (Zr,Ti)Nsolid solution with (111) and (200) preferred orientations. The (200) orientation is only presentwhen the films are grown at ion bombardment energies higher than 33 eV. Optimum conditions forfilm growth produced hardness in the range of 27-29 GPa
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.136.133.pdf
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