Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 136 (Feb. 2008), p. 139-144
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The initials results on growth and structural properties of Ni-Mn-Al full Heusler alloy thinfilms on silicon substrates deposited by RF magnetron sputtering is reported in this paper. Goodcrystallinity in the film is obtained by optimizing the sputtering parameters. The as-deposited filmwas post-annealed in vacuum in the temperature range between 150 °C, 250 °C and 450 ºC for60 min. It is observed that as deposited film shows nanocrystalline in nature. The film annealed at450 °C shows L21 structure. The magnetic properties of the NiMnAl films at room temperature aremeasured by vibrating sample magnetometer [VSM]. It is found that the annealed samples showsclear saturating loop whereas the as prepared film is paramagnetic in nature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.136.139.pdf
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