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Digitale Medien

Potential pinch-off effect in inhomogeneous Au/Co/GaAs67P33(100)-Schottky contacts (1997)

Olbrich, Alexander ; Vancea, Johann ; Kreupl, Franz ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 2559-2561

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In this work ballistic electron emission microscopy was used to probe on nanometer scale the local Schottky barrier height in metal-semiconductor (MS) contacts with an intentionally inhomogeneously prepared metallization. Schottky barrier maps of heterogeneous Au/Co/ GaAs67P33(100)-Schottky contacts show areas with different barrier heights which can be correlated to different metallizations (Au or Co) at the interface. The local Schottky barrier height of the Co patches depends on their lateral extension. This result can be explained by the theory of the potential pinch-off effect in inhomogeneous MS contacts. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.119203

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