Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 1729-1731
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Nanometer-scale Si structures have been fabricated by anodic oxidation with an atomic force microscope (AFM) and dry etching using an electron cyclotron resonance (ECR) source. The AFM is used to anodically oxidize a thin surface layer on a H-passivated (100) Si surface. This oxide is used as a mask for etching in a Cl2 plasma generated by the ECR source. An etch selectivity (approximately-greater-than)20 was obtained by adding 20% O2 to the Cl2 plasma. The AFM-defined mask withstands a 70 nm deep etch, and linewidths∼10 nm have been obtained with a 30 nm etch depth. © 1995 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.113348
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