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Digitale Medien

Nature of the Schottky-type barrier of highly dense SnO2 systems displaying nonohmic behavior (2000)

Bueno, P. R. ; de Cassia-Santos, M. R. ; Leite, E. R. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 6545-6548

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The electrical characteristics of highly dense SnO2 ceramic varistors are believed to be caused by the existence of potential barriers at the grain boundary. A complex plane analysis technique (to eliminate the influence of trapping activity associated with the conductance term observed via depression angle of a semicircular relaxation in the complex capacitance plane), allied with an approached Mott–Schottky model, are used to demonstrate that the potential barriers at the grain boundary are Schottky-type barriers in SnO2 varistors such as those observed in the traditional ZnO varistor. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1320012

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