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Digitale Medien

Implantation temperature effect on polycrystalline silicon by ion shower doping (1993)

Mishima, Y. ; Takei, M. ; Matsumoto, N. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 7114-7117

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We present a new doping technique using an ion shower doping system with a bucket ion source. Phosphorus atoms were implanted in polycrystalline silicon from room temperature to 300 °C. Sheet resistances were significantly reduced by raising the implantation temperature. With a crystal fraction of 85%, sheet resistance was 5×102 S−1/(D'Alembertian) as implanted. These effects were not due to pure thermal annealing by ion beam heating. A significant improvement was found in sheet resistance as a result of averaging the impurity profile by radiation enhanced diffusion and low temperature recrystallization of the implanted region by collision of atoms.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.355026

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